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| 2N5770 Discrete POWER & Signal Technologies 2N5770 C BE TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 15 30 4.5 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5770 350 2.8 125 357 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N5770 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 3.0 mA, IB = 0 IC = 1.0 A, IE = 0 IE = 10 A, IC = 0 VCB = 15 V, IE = 0 VCB = 15 V, IE = 0, TA = 150 C VEB = 3.0 V, IC = 0 VEB = 2.0 V, IC = 0 15 30 4.5 10 1.0 10 1.0 V V V nA A A A ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 3.0 mA VCE = 10 V, IC = 8.0 mA IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA 20 50 200 0.4 1.0 V V SMALL SIGNAL CHARACTERISTICS NF Ccb Cib hfe Noise Figure Collector-Base Capacitance Input Capacitance Small-Signal Current Gain IC = 1.0 mA, VCE = 8.0 V, f = 60 MHz, Rg = 400 VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V IC = 8.0 mA, VCE = 10 V, f = 100 MHz IC = 8.0 mA, VCE = 10 V, f = 1.0 kHz IE = 8.0 mA, VCB = 10 V, f = 79.8 MHz 9.0 40 3.0 6.0 0.7 1.1 2.0 18 240 20 dB pF pF rb'CC Collector-Base Time Constant pS FUNCTIONAL TEST Gpe PO Amplifier Power Gain Power Output Collector Efficiency I C = 6.0 mA, VCB = 12 V, f = 200 MHz VCC = 15 V, IC = 8.0 mA, f = 500 MHz 15 30 25 dB mW % *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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